smd type ic smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source KDD3670 features 34 a, 100 v. r ds(on) = 32m @v gs =10v r ds(on) = 35m @v gs =6v low gate charge (57 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gs 20 v drain current continuous (note 1) 34 a drain current pulsed 100 a power dissipation @ t c =25 (note 1) 83 power dissipation @ t a =25 (note 1a) 3.8 power dissipation @ ta=25 (note 1b) 1.6 operating and storage temperature t j ,t stg -55to175 thermal resistance junction to case r jc 1.8 /w thermal resistance junction to ambient r ja 96 /w i d p d w smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit single pulse drain-source avalanche energy w dss v dd =50v,i d = 7.3a (not 2) 360 mj maximum drain-source avalanche current i ar ( not 2) 7.3 a drain-source breakdown voltage b vdss v gs =0v,i d =250 a 100 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 92 mv/ zero gate voltage drain current i dss v ds =80v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 22.54 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -7.2 mv/ v gs =10v,i d =7.3a 22 32 v gs =10v,i d =7.3a,tj=125 39 56 v gs =6v,i d =7 a, 24 35 on-state drain current i d(on) v gs =10v,v ds =5v 25 a forward transconductance g fs v ds =5v,i d =7.3a 15 31 s input capacitance c iss 2490 pf output capacitance c oss 265 pf reverse transfer capacitance c rss 80 pf turn-on delay time t d(on) 16 26 ns turn-on rise time tr 10 18 ns turn-off delay time t d(off) 56 84 ns turn-off fall time t f 25 40 ns total gate charge q g 57 80 nc gate-source charge q gs 11 nc gate-drain charge q gd 15 nc maximum continuous drain-source diode forward current i s 2.7 a drain-source diode forward voltage v sd v gs =0v,i s = 2.7 a (not 2) 0.72 1.2 v v ds =50v,i d =7.3a,v gs =10v (note 2) m r ds(on) static drain-source on-resistance v dd =30v,i d =1a,v gs =10v,r gen =6 v ds =50v,v gs =0v,f=1.0mhz smd type ic smd type transistors KDD3670 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
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